A redundant low power PCM telemeter for the orbiting solar observatory

Redundant low power PCM telemeter for OS

Unemployment Insurance and the Firm's Employment Strategy: A European and United States Comparison

Focuses on the effects of the changes in unemployment insurance benefits on layoff and working hours policies of firms. Factors contributing to the changes in payment of the insurance funds; Relationship between recession and labor market; Concerns over the distributional employment characteristics of unemployment insurance schemes

Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation

Lin J, Neuhaeusler U, Slieh J, et al. Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. In: Microelectronic Engineering. MICROELECTRONIC ENGINEERING. Vol 84. ELSEVIER SCIENCE BV; 2007: 1011-1014.Extreme ultraviolet (EUV) photoemission electron microscopy (PEEM), which employs standing wave field illumination of a sample, is a potential tool for at-wavelength inspection of phase defects on extreme ultraviolet lithography (EUVL) mask blank. In this paper, we will demonstrate that the contrast of an underneath multilayer programmed defect in EUV-PEEM image is strongly dependent on the inspection wavelength. The observed contrast variation at different inspection wavelengths is in good agreement with the simulation result of a standing wave field on surface of multilayer stack in the mask blank sample. We also observed some native defects on the programmed defect sample, and found that some of them reverse their contrast with varying inspection wavelengths while others do not. (c) 2007 Elsevier B.V. All rights reserved